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IRFIBF20G Vishay IRFIBF20G Real Image
Same model may have multiple batches, images only for reference.
IRFIBF20G Vishay IRFIBF20G Real Image
IRFIBF20G Vishay IRFIBF20G Real Image
Same model may have multiple batches, images only for reference.

IRFIBF20G

Part No IRFIBF20G
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.2A) | MOSFET N-CH 900V 1.2A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 900V
Id - Continuous Drain Current 1.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 8Ohm at 720mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 38nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 490pF at 25V
Power Dissipation (Maximum) 30W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3 Full Pack, Isolated Tab
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187698-IRFIBF20G
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIBF20G CAD Model

Description

The IRFIBF20G is a MOSFET technology transistor manufactured by Vishay Siliconix.

  • Channel Type: N-channel
  • Package: TO-220-3 full pack, isolated tab
  • Operating Temperature: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current: 1.2A
  • Maximum Rds On: 8Ohm @ 720mA, 10V
  • Gate-Source Voltage(th) (maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 38nC @ 10V
  • Gate-Source Voltage (maximum): ±20V
  • Input Capacitance (Ciss) (maximum) @ Vds: 490pF @ 25V
  • Applications: Suitable for various applications

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