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Same model may have multiple batches, images only for reference.
IRFP21N60LPBF Real Image
Same model may have multiple batches, images only for reference.

IRFP21N60LPBF

Part No IRFP21N60LPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A TO-247AC
Datasheet
IRFP21N60LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 320 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 005340-IRFP21N60LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP21N60LPBF CAD Model

Description

The Vishay IRFP21N60LPBF is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current at 25°C: 21A (Tc)
  • Package: TO-247-3
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id,Vgs: 320 mOhm @ 13A, 10V
  • Supply and Demand Status: Balanced

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53+ $2.2072 $116.9816
82+ $2.1379 $175.3078
112+ $2.0686 $231.6832
145+ $2.0005 $290.0725
194+ $1.7937 $347.9778
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