The Vishay Siliconix MOSFET is a high-quality, N-channel transistor with a Vds - Drain-Source Breakdown Voltage of 60V and Id - Continuous Drain Current of 7.7A. It has a Rds On (Maximum) at Id, Vgs of 200mOhm at 4.6A, 10V and Gate Charge (Qg) (Maximum) at Vgs of 11nC at 10V. The MOSFET is designed to operate in a temperature range of -55°C to 150°C and has an Input Capacitance (Ciss) (Maximum) at Vds of 300pF at 25V. It is obsolete and comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package. The supply and demand status is balanced, and it comes in a manufacturer pack quantity of 2,000.