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Same model may have multiple batches, images only for reference.
IRFR224TR Real Image
Same model may have multiple batches, images only for reference.

IRFR224TR

Part No IRFR224TR
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 250V 3.8A DPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 250V
Id - Continuous Drain Current 3.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.1Ohm at 2.3A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 260pF at 25V
Power Dissipation (Maximum) 2.5W, 42W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187885-IRFR224TR
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR224TR CAD Model

Description

The Vishay Siliconix IRFR224TR MOSFET is a highly reliable and efficient N-Channel transistor that is designed for use in discrete semiconductor products.

  • Type: N-Channel MOSFET
  • Manufacturer: Vishay Siliconix
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 3.8A
  • Maximum Rds On: 1.1Ohm @ 2.3A
  • Gate-Source Voltage(th): 4V @ 250μA
  • Gate Charge (Qg): 14nC @ 10V
  • Input Capacitance (Ciss): 260pF @ 25V
  • Package: D-Pak
  • Leads: 2
  • Tab: SC-63
  • Power Dissipation: 2.5W and 42W, respectively
  • Status: Obsolete
  • Popularity: Medium
  • Supply and Demand: Balance

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525+ $0.1911 $100.3275
815+ $0.1851 $150.8565
1,120+ $0.1791 $200.5920
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1,935+ $0.1552 $300.3120
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