The IRFR430ATR is an N-channel power MOSFET manufactured by Vishay. It is designed for high-speed switching applications, commonly found in power supplies, motor control, and lighting systems. This MOSFET features low on-resistance and is optimized for efficient power conversion.

Applications

• Switch Mode Power Supplies (SMPS)
• DC-DC converters
• Motor control circuits
• LED lighting systems
• Uninterruptible Power Supplies (UPS)

Features

• N-Channel MOSFET
• Fast Switching Speed
• Low On-Resistance (RDS(on))
• High Voltage Capability (200V Drain-Source Voltage)
• Logic Level Gate Drive

Benefits

• Increased efficiency due to the low on-resistance, minimizing power losses and reducing heat generation.
• Simplified drive requirements due to the logic level gate drive, enabling direct interfacing with logic circuits.
• Improved performance in high-frequency applications due to the fast switching speed, reducing switching losses.
• Reduced system size and cost due to efficient power conversion, allowing for smaller heat sinks and components.
• Enhanced reliability in demanding environments due to robust design and voltage handling capabilities.

Additional Details

The IRFR430ATR has a drain-source voltage (Vds) rating of 200V and a continuous drain current (Id) rating of 3.8A at 25°C. The on-resistance (RDS(on)) is typically 0.4 Ohms at Vgs = 10V. It is packaged in an IPAK (TO-251) package, optimized for efficient thermal management. The gate threshold voltage is typically between 1V and 2.5V. The power dissipation is rated at 38W. The logic level gate drive simplifies integration with microcontrollers and other logic-based control systems.

The IRFR430ATR is designed for applications that require high-speed switching and efficient power conversion. Its low on-resistance and fast switching speed contribute to improved system efficiency and performance. The logic level gate drive allows for easy implementation in various electronic systems. This device is RoHS compliant.