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Same model may have multiple batches, images only for reference.
IRFR9010PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR9010PBF

Part No IRFR9010PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 50V 5.3A 3-Pin(2+Tab) DPAK / MOSFET P-CH 50V 5.3A DPAK
Datasheet
IRFR9010PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 9.1nC @ 10V
Max Input Capacitance 240pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1040063-IRFR9010PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFR9010
Introduction Date March 17, 2009
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFR9010PBF CAD Model

Description

The IRFR9010PBF is a P-channel MOSFET from the IRFR9010 family.

  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current: 5.3A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 9.1nC @ 10V
  • Maximum Input Capacitance: 240pF @ 25V
  • Maximum Rds On: 500 mOhm @ 2.8A, 10V
  • Package: D-Pak, TO-252-3, DPak package
  • Maximum Power: 25W
  • Application: Discrete semiconductor products

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Quantity Unit Price Ext. Price
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275+ $0.4262 $117.2050
420+ $0.4135 $173.6700
580+ $0.3996 $231.7680
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1,000+ $0.3465 $346.5000
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