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Same model may have multiple batches, images only for reference.
IRFSL11N50A Real Image
Same model may have multiple batches, images only for reference.

IRFSL11N50A

Part No IRFSL11N50A
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 11A TO-262
Datasheet
IRFSL11N50A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 1426pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 60966-IRFSL11N50A
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFSL11N50A CAD Model

Description

The Vishay IRFSL11N50A is an N-Channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 11A.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 11A
  • Power Dissipation: 190W (Tc)
  • Package: TO-262-3
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 51nC @ 10V

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56+ $2.0827 $116.6312
86+ $2.0177 $173.5222
119+ $1.9526 $232.3594
153+ $1.8875 $288.7875
205+ $1.6922 $346.9010
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Availability: 6,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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