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IRFSL9N60A

Part No IRFSL9N60A
Manufacturer Vishay
Catalog FETs - Single
Description SMPS MOSFET | MOSFET N-CH 600V 9.2A TO-262
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 9.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 750mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 49nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1400pF at 25V
Power Dissipation (Maximum) 170W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-262-3
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188055-IRFSL9N60A
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFSL9N60A CAD Model

Description

The Vishay Siliconix IRFSL9N60A is an N-channel MOSFET transistor with a maximum power dissipation of 170W.

  • Power Dissipation: 170W
  • Drive Voltage (max Rds on, min Rds on): 10V
  • Temperature Range: -55°C to 150°C
  • Mounting: Through-hole
  • Package: TO-262-3
  • Alternative Cross-Reference Part Number: AOW12N65, STFI13NK60Z, IRFSL9N60APBF, and IRFSL9N60A
  • Supply and Demand Status: Balanced
  • Packaging: Tube
  • Manufacturer Pack Quantity: 50

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4394 $58.5456
58+ $2.0016 $116.0928
90+ $1.9392 $174.5280
124+ $1.8769 $232.7356
160+ $1.8145 $290.3200
214+ $1.6262 $348.0068
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,270 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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