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Same model may have multiple batches, images only for reference.
IRFZ14PBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ14PBF

Part No IRFZ14PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 10A TO-220AB
Datasheet
IRFZ14PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069618-IRFZ14PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ14PBF CAD Model

Description

This N-Channel MOSFET electronic component is manufactured by Vishay.

  • Power Dissipation (Max): 43W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Mounting: through hole
  • Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 10A (Tc)
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8218 $53.4170
150+ $0.6743 $101.1450
230+ $0.6532 $150.2360
320+ $0.6322 $202.3040
410+ $0.6111 $250.5510
550+ $0.5479 $301.3450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,312 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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