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Same model may have multiple batches, images only for reference.
IRFZ34STRR Real Image
Same model may have multiple batches, images only for reference.

IRFZ34STRR

Part No IRFZ34STRR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A D2PAK
Datasheet
IRFZ34STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 88W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047241-IRFZ34STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ34STRR CAD Model

Description

The Vishay IRFZ34STRR is an N-Channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 30A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Maximum Rds On @ Id,Vgs: 50 mOhm @ 18A, 10V
  • Max Gate Charge: 46nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Max Input Capacitance: 1200pF @ 25V
  • Package: D2PAK case/package
  • Mounting: SMD (SMT) technology
  • Popularity: Medium
  • Supply and Demand Status: balanced
  • Status: Obsolete (EOL).

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