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Same model may have multiple batches, images only for reference.
IRFZ44S Real Image
Same model may have multiple batches, images only for reference.

IRFZ44S

Part No IRFZ44S
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 60V 50A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 50A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 28mOhm at 31A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 67nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 25V
Power Dissipation (Maximum) 3.7W, 150W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188190-IRFZ44S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ44S CAD Model

Description

The IRFZ44S is an N-Channel MOSFET transistor manufactured by Vishay Siliconix.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 50A
  • On-Resistance (Max): 28mOhm @ 31A and 10V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 67nC @ 10V
  • Input Capacitance: 1900pF @ 25V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting: SMD Technology
  • Power Dissipation: 3.7W and 150W
  • Product Type: Discrete Semiconductor
  • Status: Obsolete
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (Unlimited)

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80+ $1.3134 $105.0720
120+ $1.2724 $152.6880
165+ $1.2314 $203.1810
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285+ $1.0672 $304.1520
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