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Same model may have multiple batches, images only for reference.
IRFZ44STRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ44STRRPBF

Part No IRFZ44STRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A D2PAK
Datasheet
IRFZ44STRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 150W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 134646-IRFZ44STRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ44STRRPBF CAD Model

Description

The Vishay IRFZ44STRRPBF is a N-channel MOSFET transistor, which is a popular choice for power management applications.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 50A @ 25°C
  • Maximum Rds On at Id,Vgs: 28 mOhm @ 31A, 10V
  • Package: D2PAK
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 67nC @ 10V
  • Maximum Input Capacitance: 1900pF @ 25V
  • Drive Voltage: 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Power Dissipation: 3.7W (Ta), 150W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Status: obsolete(EOL)
  • Popularity: medium
  • Supply and demand status: limited

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80+ $1.3134 $105.0720
120+ $1.2724 $152.6880
165+ $1.2314 $203.1810
215+ $1.1903 $255.9145
285+ $1.0672 $304.1520
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