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IRFZ48PBF

Part No IRFZ48PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1047266-IRFZ48PBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Defence, Military & Aerospace, Consumer Electronics, Imaging, Video & Vision
Ultra Librarian 3D Model Ultra Librarian IRFZ48PBF CAD Model

Description

The Vishay 1047266-IRFZ48PBF is a high-power N-channel MOSFET designed to work in various applications.

  • Power Dissipation: 190W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Popularity: Medium
  • Manufacturer: Vishay
  • Supply and Demand: Balanced
  • Applications: Defence, military & aerospace, consumer electronics, imaging, video & vision

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1704 $65.1120
65+ $1.7809 $115.7585
105+ $1.7253 $181.1565
140+ $1.6696 $233.7440
180+ $1.6139 $290.5020
240+ $1.4470 $347.2800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,080 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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