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IRFZ48RSPBF

Part No IRFZ48RSPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (D2Pak)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047268-IRFZ48RSPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ48RSPBF CAD Model

Description

The IRFZ48RSPBF is an N-channel MOSFET that belongs to the category of discrete semiconductor products from Infineon.

  • Mounting Technology: SMD (SMT)
  • Packaging: Tube/rail
  • Technology: MOSFET
  • Polarity: N-channel
  • Case/Package: TO-263 (D2Pak)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 50A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge @ 10V: 110nC
  • Max Input Capacitance @ 25V: 2400pF
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ 43A, 10V: 18 mOhm
  • Supply and Demand Status: Balanced
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.1666 $51.9984
57+ $1.7777 $101.3289
88+ $1.7222 $151.5536
120+ $1.6667 $200.0040
156+ $1.6111 $251.3316
208+ $1.4444 $300.4352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,640 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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