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Same model may have multiple batches, images only for reference.
IRFZ48SPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ48SPBF

Part No IRFZ48SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A D2PAK
Datasheet
IRFZ48SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 190W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 136729-IRFZ48SPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFZ48SPBF CAD Model

Description

The Vishay IRFZ48SPBF is a N-Channel MOSFET from Vishay.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 50A @ 25°C
  • Maximum Rds On: 18 mOhm @ Id,Vgs of 43A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 2400pF @ 25V
  • Power Dissipation: 3.7W (Ta), 190W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Popularity: medium

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