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Same model may have multiple batches, images only for reference.
IRL540STRR Real Image
Same model may have multiple batches, images only for reference.

IRL540STRR

Part No IRL540STRR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 28A D2PAK
Datasheet
IRL540STRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 64nC @ 5V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 3.7W (Ta), 150W (Tc)
Maximum Rds On at Id,Vgs 77 mOhm @ 17A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047513-IRL540STRR
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRL540STRR CAD Model

Description

The Vishay IRL540STRR is a surface mount N-channel MOSFET with a maximum drain-source breakdown voltage of 100V and a continuous drain current of 28A @ 25°C.

  • Power Dissipation: 3.7W (Ta) and 150W (Tc)
  • Drive Voltage: 4V (max Rds on) and 5V (min Rds on)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 64nC @ 5V
  • Maximum Input Capacitance: 2200pF @ 25V
  • Maximum Rds on: 77 mOhm @ 17A, 5V
  • Package: D2PAK
  • Use: Discrete semiconductor products

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