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Same model may have multiple batches, images only for reference.
IRLD110PBF Real Image
Same model may have multiple batches, images only for reference.

IRLD110PBF

Part No IRLD110PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1A 4-DIP
Datasheet
IRLD110PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6.1nC @ 5V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 540 mOhm @ 600mA, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 123914-IRLD110PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLD110PBF CAD Model

Description

The Vishay 123914-IRLD110PBF MOSFET is an N-Channel power transistor designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.3W (Ta)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 1A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 6.1nC @ 5V
  • Maximum Input Capacitance: 250pF @ 25V
  • Maximum Rds On at Id, Vgs: 540 mOhm @ 600mA, 5V
  • Package: 4-DIP case
  • Dimensions: 0.300", 7.62mm
  • Popularity: popular
  • Supply and Demand Status: balance

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Quantity Unit Price Ext. Price
22+ $2.3284 $51.2248
53+ $1.9105 $101.2565
82+ $1.8508 $151.7656
112+ $1.7911 $200.6032
145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
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Availability: 9,440 pieces
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