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IRLU110PBF

Part No IRLU110PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.3A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 6.1nC @ 5V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 540 mOhm @ 2.6A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047667-IRLU110PBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian IRLU110PBF CAD Model

Description

The IRLU110PBF is an N-channel MOSFET transistor manufactured by Vishay.

  • Maximum Power Dissipation: 2.5 W (Ta), 25 W (Tc)
  • Voltage Rating: 100 V
  • Supply and Demand: Sufficient
  • Maximum Rds On @ Id, Vgs: 540 mOhm @ 2.6A, 5V
  • Maximum Gate-Source Voltage: ±10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2195 $58.1675
645+ $0.1802 $116.2290
995+ $0.1744 $173.5280
1,370+ $0.1686 $230.9820
1,775+ $0.1629 $289.1475
2,365+ $0.1467 $346.9455
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,900 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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