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Same model may have multiple batches, images only for reference.
SI1011X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1011X-T1-GE3

Part No SI1011X-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 12V SC-89
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Maximum) at Id, Vgs 640mOhm at 400mA, 4.5V
Vgs(th) (Maximum) at Id 800mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 4nC at 4.5V
Maximum Vgs ±5V
Input Capacitance (Ciss) (Maximum) at Vds 62pF at 6V
Power Dissipation (Maximum) 190mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SC-89-3
Manufacturer Package SC-89, SOT-490
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 800984-SI1011X-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI1011X-T1-GE3 CAD Model

Description

The 800984-SI1011X-T1-GE3 is a P-channel MOSFET manufactured by Vishay Siliconix.

  • Mounting Style: SMD
  • Drain to Source Voltage (Vdss): 12V
  • Part Status: Obsolete (End of Life)
  • Supplier Device Package: SC-89-3
  • Drive Voltage (max Rds on, min Rds on): 1.2V, 4.5V
  • Operating Temperature Range: -55°C to 150°C
  • Manufacturer Package: SC-89, SOT-490
  • Manufacturer Pack Quantity: 3,000
  • MSL Level: 1 (Unlimited)
  • Rds On (maximum) @ Id, Vgs: 640mOhm @ 400mA, 4.5V
  • Gate Charge (Qg) (maximum) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (maximum) @ Vds: 62pF @ 6V
  • Maximum Vgs: ±5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4552 $50.9320
85+ $1.1941 $101.4985
130+ $1.1567 $150.3710
180+ $1.1194 $201.4920
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
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