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Same model may have multiple batches, images only for reference.
SI1016X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1016X-T1-E3

Part No SI1016X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SOT563F
Datasheet
SI1016X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 485mA, 370mA
Maximum Rds On at Id,Vgs 700 mOhm @ 600mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.75nC @ 4.5V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 103360-SI1016X-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1016X-T1-E3 CAD Model

Description

The SI1016X-T1-E3 from Vishay is a high-performance FET designed to provide superior performance in electronic circuits.

  • Resistance: 700 mOhm @ 600mA and 4.5V
  • Maximum Power Dissipation: 250mW
  • Drain-Source Breakdown Voltage: 20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: SC-89-6
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
395+ $0.1478 $58.3810
955+ $0.1213 $115.8415
1,475+ $0.1178 $173.7550
2,045+ $0.1132 $231.4940
2,635+ $0.1097 $289.0595
3,530+ $0.0982 $346.6460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,970 pieces
MOQ: 395 pcs
Order Increment : 1 pcs
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