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SI1021R-T1-GE3

Part No SI1021R-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 190MA SC-75A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 1.7nC @ 15V
Max Input Capacitance 23pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250mW (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75A
Dimension SC-75A
Win Source Part Number 028328-SI1021R-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1021R-T1-GE3 CAD Model

Description

The Vishay MOSFET with the part number SI1021R-T1-GE3 is a P-Channel polarity component.

  • Maximum Power Dissipation: 250mW (Ta)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 190mA (Ta) @ 25°C
  • Maximum Rds On: 4 Ohm @ 500mA, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 1.7nC @ 15V
  • Maximum Input Capacitance: 23pF @ 25V
  • Package: SC-75A
  • Applications: Discrete semiconductor products
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7277 $50.9390
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,800 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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