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Same model may have multiple batches, images only for reference.
SI1024X-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI1024X-T1-E3

Part No SI1024X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.485A SOT563F
Datasheet
SI1024X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 485mA
Maximum Rds On at Id,Vgs 700 mOhm @ 600mA, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 0.75nC @ 4.5V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 105276-SI1024X-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1024X-T1-E3 CAD Model

Description

The Vishay 105276-SI1024X-T1-E3 is a dual N-channel logic level gate FET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 250mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 485mA @ 25°C
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Maximum Gate Charge: 0.75nC @ 4.5V
  • Maximum Rds On: 700 mOhm @ 600mA, 4.5V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7331 $51.3170
170+ $0.6016 $102.2720
260+ $0.5828 $151.5280
355+ $0.5640 $200.2200
460+ $0.5452 $250.7920
615+ $0.4888 $300.6120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,770 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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