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Same model may have multiple batches, images only for reference.
SI1025X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1025X-T1-E3

Part No SI1025X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 60V 0.19A SOT563F
Datasheet
SI1025X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 190mA
Maximum Rds On at Id,Vgs 4 Ohm @ 500mA, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 1.7nC @ 15V
Max Input Capacitance 23pF @ 25V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 096733-SI1025X-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1025X-T1-E3 CAD Model

Description

The SI1025X-T1-E3 is a 2 P-Channel (Dual) FET manufactured by Vishay.

  • Component Designed for: discrete semiconductor products
  • Status: obsolete (EOL)
  • Maximum Power Dissipation: 250mW
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 190mA
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 1.7nC @ 15V
  • Maximum Input Capacitance: 23pF @ 25V
  • Maximum Rds On @ Id, Vgs: 4 Ohm @ 500mA, 10V
  • Supply and demand status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2053 $50.2985
595+ $0.1685 $100.2575
920+ $0.1632 $150.1440
1,270+ $0.1579 $200.5330
1,640+ $0.1527 $250.4280
2,195+ $0.1369 $300.4955
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 110,700 pieces
MOQ: 245 pcs
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