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SI1031X-T1-GE3

Name: SI1031X-T1-GE3
Brand: Vishay
SKU: 320773
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI1031X-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 20V 0.155A SC-75A
Datasheet	SI1031X-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	155mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Gate-Source Threshold Voltage	1.2V @ 250μA
Max Gate Charge	1.5nC @ 4.5V
Maximum Gate-Source Voltage	±6V
Power Dissipation (Max)	300mW (Ta)
Maximum Rds On at Id,Vgs	8 Ohm @ 150mA, 4.5V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	SC-75A
Dimension	SC-75A
Win Source Part Number	109255-SI1031X-T1-GE3
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian SI1031X-T1-GE3 CAD Model

Alternative Products

Description

The Vishay SI1031X-T1-GE3 is a P-Channel MOSFET with a power dissipation (max) of 300mW (Ta).

Category: Discrete Semiconductor Products
Mounting: SMD (SMT) technology
Drive Voltage: 1.5V, 4.5V
Temperature Range: -55°C to 150°C (TJ)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current: 155mA (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 1.5nC @ 4.5V
Maximum Rds On @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Supply and demand status: Balanced

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
230+	$0.2538	$58.3740
555+	$0.2083	$115.6065
860+	$0.2018	$173.5480
1,185+	$0.1952	$231.3120
1,530+	$0.1887	$288.7110
2,050+	$0.1692	$346.8600

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 6,000 pieces

MOQ: 230 pcs

Order Increment : 1 pcs

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