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Same model may have multiple batches, images only for reference.
SI1033X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1033X-T1-E3

Part No SI1033X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 0.145A SOT563F
Datasheet
SI1033X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 145mA
Maximum Rds On at Id,Vgs 8 Ohm @ 150mA, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 1.5nC @ 4.5V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 1095666-SI1033X-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1033X-T1-E3 CAD Model

Description

The Vishay SI1033X-T1-E3 is a dual P-channel logic level gate FET that is mounted on a reel.

  • Mounting: Reel
  • Status: Obsolete
  • Maximum Power Dissipation: 250mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25 degrees Celsius: 145mA
  • Gate-Source Threshold Voltage: 1.2V @ 250 microamps
  • Maximum Gate Charge: 1.5nC @ 4.5V
  • Maximum Rds on @ Id,Vgs: 8 Ohm @ 150mA, 4.5V
  • Category: Discrete Semiconductor Products

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