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Same model may have multiple batches, images only for reference.
SI1033X-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1033X-T1-GE3

Part No SI1033X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 0.145A SC89
Datasheet
SI1033X-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 145mA
Maximum Rds On at Id,Vgs 8 Ohm @ 150mA, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 1.5nC @ 4.5V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 106519-SI1033X-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1033X-T1-GE3 CAD Model

Description

The Vishay SI1033X-T1-GE3 is a 2 P-Channel (Dual) FET with a Logic Level Gate feature.

  • Manufacturer: Vishay
  • Product Name: SI1033X-T1-GE3
  • FET Type: 2 P-Channel (Dual)
  • Feature: Logic Level Gate
  • Category: Discrete Semiconductor Products
  • Mounting: Surface Mount Device (SMD)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: SC-89-6
  • Maximum Power Dissipation: 250mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 145mA
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Gate Charge: 1.5nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 8 Ohm @ 150mA, 4.5V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2777 $58.3170
510+ $0.2279 $116.2290
785+ $0.2208 $173.3280
1,085+ $0.2137 $231.8645
1,400+ $0.2065 $289.1000
1,875+ $0.1852 $347.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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