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SI1034CX-T1-GE3

Part No SI1034CX-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 0.61A 6-Pin SC-89 T/R / MOSFET 2N-CH 20V SC89-6
Datasheet
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 610mA (Ta)
Maximum Rds On at Id,Vgs 396 mOhm @ 500mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 2nC @ 8V
Max Input Capacitance 43pF @ 10V
Maximum Power Dissipation 220mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 064373-SI1034CX-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si1034CX
Introduction Date February 14, 2011
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI1034CX-T1-GE3 CAD Model

Description

The Vishay Si1034CX-T1-GE3 is a 2 N-Channel (Dual) FET with a Logic Level Gate, making it suitable for use in a range of applications.

  • Manufacturer: Vishay
  • Product Name: Si1034CX-T1-GE3
  • Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 610mA
  • Maximum Input Capacitance: 43pF @ 10V
  • Maximum Rds On: 396 mOhm @ 500mA and 4.5V
  • Package: SC-89-6
  • Maximum Power Dissipation: 220mW
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate Charge: 2nC @ 8V
  • Supply and Demand Status: Limited
  • Estimated EOL Date: 2027

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2063 $50.5435
595+ $0.1693 $100.7335
915+ $0.1640 $150.0600
1,265+ $0.1587 $200.7555
1,630+ $0.1534 $250.0420
2,185+ $0.1375 $300.4375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,305 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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