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SI1046R-T1-GE3

Part No SI1046R-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.606A SC75-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 1.49nC @ 5V
Max Input Capacitance 66pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 250mW (Ta)
Maximum Rds On at Id,Vgs 420 mOhm @ 606mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75A
Dimension SC-75A
Win Source Part Number 1095669-SI1046R-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1046R-T1-GE3 CAD Model

Description

The Vishay SI1046R-T1-GE3 MOSFET is a N-channel, SMD (SMT) mounted device that is part of the Discrete Semiconductor Products category. Vishay SI1046R-T1-GE3

  • Channel Type: N-channel
  • Mounting Type: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 250mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Drive Voltage: 1.8V (max Rds On) and 4.5V (min Rds On)
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Maximum Input Capacitance: 66pF @ 10V
  • Maximum Rds On @ Id,Vgs: 420 mOhm @ 606mA, 4.5V
  • Supply and Demand Status: balanced
  • Product Status: obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9748 $58.4880
145+ $0.8000 $116.0000
225+ $0.7749 $174.3525
310+ $0.7500 $232.5000
400+ $0.7249 $289.9600
535+ $0.6500 $347.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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