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SI1305DL-T1-GE3

Part No SI1305DL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 0.86A SC-70-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 4nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 290mW (Ta)
Maximum Rds On at Id,Vgs 280 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3
Dimension SC-70, SOT-323
Win Source Part Number 115044-SI1305DL-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1305DL-T1-GE3 CAD Model

Description

The Vishay SI1305DL-T1-GE3 is an obsolete (EOL) MOSFET electronic component that is designed for P-Channel polarity applications.

  • Status: Obsolete (EOL)
  • Polarity: P-Channel
  • Drain-Source Breakdown Voltage: 8V
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 1A, 4.5V
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Gate Charge: 4nC @ 4.5V
  • Continuous Drain Current @ 25°C: 860mA (Ta)
  • Case/Package: SC-70-3
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
530+ $0.1097 $58.1410
1,285+ $0.0901 $115.7785
2,000+ $0.0866 $173.2000
2,740+ $0.0843 $230.9820
3,525+ $0.0820 $289.0500
4,765+ $0.0728 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 138,900 pieces
MOQ: 530 pcs
Order Increment : 1 pcs
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