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Same model may have multiple batches, images only for reference.
SI1317DL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1317DL-T1-GE3

Part No SI1317DL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.4A SC70
Datasheet
SI1317DL-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 6.5nC @ 4.5V
Max Input Capacitance 272pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 400mW (Ta), 500mW (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 1.4A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 1095680-SI1317DL-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1317DL-T1-GE3 CAD Model

Description

The Vishay 1095680-SI1317DL-T1-GE3 is a P-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 1.4A (Tc).

  • Channel: P-Channel
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.4A (Tc)
  • Gate-Source Threshold Voltage: 800mV @ 250μA
  • Maximum Gate Charge: 6.5nC @ 4.5V
  • Maximum Input Capacitance: 272pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On: 150 mOhm @ 1.4A, 4.5V
  • Drive Voltage: 1.8V, 4.5V
  • Power Dissipation: 400mW (Ta), 500mW (Tc)
  • Operating Temperature Range: -50°C to 150°C (TJ)
  • Package: SOT-323
  • Mounting: SMD (SMT)

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Quantity Unit Price Ext. Price
115+ $0.4428 $50.9220
245+ $0.4143 $101.5035
375+ $0.4000 $150.0000
540+ $0.3714 $200.5560
705+ $0.3571 $251.7555
875+ $0.3429 $300.0375
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