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SI1427EDH-T1-GE3

Part No SI1427EDH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2A SOT-363
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 21nC @ 8V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.56W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 64 mOhm @ 3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095691-SI1427EDH-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1427EDH-T1-GE3 CAD Model

Description

The Vishay SI1427EDH-T1-GE3 is a P-channel MOSFET that is used in various applications.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2A (Tc)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 21nC @ 8V
  • Package: SC-70-6 (SOT-363)
  • Dimension: 6-TSSOP, SC-88, SOT-363
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1920 $50.8800
635+ $0.1576 $100.0760
985+ $0.1527 $150.4095
1,355+ $0.1477 $200.1335
1,755+ $0.1428 $250.6140
2,345+ $0.1280 $300.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,236 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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