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Same model may have multiple batches, images only for reference.
SI1433DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1433DH-T1-E3

Part No SI1433DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.9A SC70-6
Datasheet
SI1433DH-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 100μA
Max Gate Charge 5nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 950mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 099008-SI1433DH-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1433DH-T1-E3 CAD Model

Description

The Vishay 099008-SI1433DH-T1-E3 is a P-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 950mW @ Ta
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 1.9A @ Ta
  • Gate-Source Threshold Voltage: 3V @ 100μA
  • Maximum Gate Charge: 5nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 150 mOhm @ 2.2A, 10V
  • Package: SC-70-6 (SOT-363)
  • Dimension: 6-TSSOP, SC-88, SOT-363
  • Status: obsolete (EOL)
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.4213 $61.8982
32+ $3.6279 $116.0928
50+ $3.5147 $175.7350
68+ $3.4015 $231.3020
88+ $3.2883 $289.3704
118+ $2.9476 $347.8168
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Availability: 25,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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