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Same model may have multiple batches, images only for reference.
SUP70N03-09 Real Image
Same model may have multiple batches, images only for reference.

SUP70N03-09

Part No SUP70N03-09
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 70A TO220AB
Datasheet
SUP70N03-09 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 057022-SUP70N03-09
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SUP70N03-09 CAD Model

Description

The Winbond Electronics SUP70N03-09 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 70A (Tc)
  • Maximum On-State Resistance: 9 mOhm @ 30A and 10V gate-source voltage
  • Mounting Technology: through hole
  • Package: TO-220AB
  • Popularity: medium
  • Status: obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4851 $58.2120
290+ $0.3985 $115.5650
450+ $0.3858 $173.6100
620+ $0.3731 $231.3220
800+ $0.3615 $289.2000
1,075+ $0.3234 $347.6550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,010 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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