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Same model may have multiple batches, images only for reference.
SI1443EDH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1443EDH-T1-GE3

Part No SI1443EDH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4A SOT-363
Datasheet
SI1443EDH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 28nC @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.6W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 54 mOhm @ 4.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095694-SI1443EDH-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1443EDH-T1-GE3 CAD Model

Description

The SI1443EDH-T1-GE3 is a P-Channel MOSFET electronic component manufactured by Vishay.

  • Manufacturer: Vishay
  • Product Name: SI1443EDH-T1-GE3
  • Component Type: P-Channel MOSFET
  • Status: Active
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Operating Temperature Range: -55°C to 150°C
  • Supply and Demand Status: Limited
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2457 $50.3685
500+ $0.2016 $100.8000
770+ $0.1953 $150.3810
1,060+ $0.1890 $200.3400
1,370+ $0.1827 $250.2990
1,835+ $0.1638 $300.5730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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