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SI1563DH-T1-E3

Part No SI1563DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N/P-CH 20V 1.13A/0.88A 6-Pin SC-70 T/R / MOSFET N/P-CH 20V 1.13A SC70-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.13A, 880mA
Maximum Rds On at Id,Vgs 280 mOhm @ 1.13A, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Gate Charge 2nC @ 4.5V
Maximum Power Dissipation 570mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 1095705-SI1563DH-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si1563DH
Introduction Date August 28, 2002
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI1563DH-T1-E3 CAD Model

Description

The Vishay Si1563DH-T1-E3 is a N and P-channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Vishay
  • Channel Type: N and P-channel MOSFET
  • Maximum Power Dissipation: 570mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1.13A, 880mA
  • Gate-Source Threshold Voltage: 1V @ 100μA
  • Maximum Gate Charge: 2nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 280 mOhm @ 1.13A, 4.5V
  • Case Package: SC-70-6 (SOT-363)
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.3309 $51.3163
17+ $6.0151 $102.2567
26+ $5.8271 $151.5046
36+ $5.6391 $203.0076
46+ $5.4512 $250.7552
62+ $4.8873 $303.0126
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,142 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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