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SI1902DL-T1-E3

Part No SI1902DL-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.66A SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 660mA
Maximum Rds On at Id,Vgs 385 mOhm @ 660mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 1.2nC @ 4.5V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 028352-SI1902DL-T1-E3
Family Name Si1902DL
Introduction Date June 05, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1902DL-T1-E3 CAD Model

Description

The Vishay SI1902DL-T1-E3 is a dual N-channel MOSFET with a logic level gate.

  • Family Name: Si1902DL
  • Case/Package: SC-70-6 (SOT-363)
  • Maximum Power Dissipation: 270mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 660mA
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 1.2nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 385 mOhm @ 660mA, 4.5V
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3564 $51.6780
300+ $0.3339 $100.1700
465+ $0.3226 $150.0090
670+ $0.3000 $201.0000
870+ $0.2888 $251.2560
1,085+ $0.2775 $301.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 177,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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