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Same model may have multiple batches, images only for reference.
SI1902DL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1902DL-T1-GE3

Part No SI1902DL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.66A SC-70-6
Datasheet
SI1902DL-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 660mA
Maximum Rds On at Id,Vgs 385 mOhm @ 660mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 1.2nC @ 4.5V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 028353-SI1902DL-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI1902DL-T1-GE3 CAD Model

Description

The SI1902DL-T1-GE3 is a dual N-channel MOSFET electronic component manufactured by Vishay.

  • Mounting: Surface-mount device
  • Case/Package: SC-70-6 (SOT-363)
  • Product Status: Active
  • Market Popularity: Medium
  • Supply and Demand Status: Limited
  • Application: Low-voltage applications
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 660mA @ 25°C
  • Maximum Power Dissipation: 270mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3590 $50.2600
340+ $0.2946 $100.1640
530+ $0.2854 $151.2620
725+ $0.2762 $200.2450
940+ $0.2670 $250.9800
1,255+ $0.2394 $300.4470
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 98,469 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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