The SI1912EDH-T1-GE3 is a P-Channel 20 V MOSFET from Vishay. It features low on-resistance and is designed for load switching, power management, and other applications needing efficient power control. The GE3 suffix indicates compliance with RoHS standards, meaning it's lead-free and environmentally friendly.

Applications

• Load Switching
• Power Management in Portable Devices
• Battery Management Systems
• DC-DC Conversion

Features

• P-Channel MOSFET
• Low On-Resistance (RDS(on))
• 20V Drain-Source Voltage
• TrenchFET® Power MOSFET Technology
• RoHS Compliant

Benefits

• Improved power efficiency due to low on-resistance
• Reduced power losses in switching applications
• Environmentally friendly due to RoHS compliance
• Enhanced thermal performance
• Suitable for lead-free assembly processes

Additional Details

The SI1912EDH-T1-GE3 leverages Vishay's TrenchFET® technology, providing optimized performance in terms of on-resistance and switching speed. This ensures minimal power dissipation and efficient operation in various applications. The RoHS compliance makes it suitable for use in environmentally conscious products.

Technical Specifications:

• Polarity: P-Channel
• Drain-Source Voltage (VDS): 20 V
• Gate-Source Voltage (VGS): ±12 V
• Continuous Drain Current (ID): -4.5 A
• On-Resistance (RDS(on) at VGS = -4.5V): 0.050 Ω
• Operating Temperature Range: -55 °C to +150 °C
• Package: TSOP-6