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SI1970DH-T1-E3

Name: SI1970DH-T1-E3
Brand: Vishay
SKU: 1092778
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI1970DH-T1-E3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET 2N-CH 30V 1.3A SC70-6 / Mosfet Array 2 N-Channel (Dual) 30V 1.3A 1.25W Surface Mount SC-70-6
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel
Product Status	Obsolete
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	1.3A
Rds On (Max) @ Id, Vgs	225mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	95pF @ 15V
Power - Max	1.25W
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-70-6
Base Product Number	SI1970
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SI1970DH-T1-E3TR,SI1970DHT1E3,SI1970DH-T1-E3DKR,SI1970DH-T1-E3CT
Standard Package	3,000
Win Source Part Number	1092778-SI1970DH-T1-E3
Ultra Librarian 3D Model	Ultra Librarian SI1970DH-T1-E3 CAD Model

Alternative Products

Description

The SI1970DH-T1-E3 is a 2 N-Channel (Dual) MOSFET from Vishay Siliconix TrenchFET® series with a drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 1.3A @ 25°C.

FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250μA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
Temperature Range: -55°C ~ 150°C (TJ)
Status: Obsolete

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