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Same model may have multiple batches, images only for reference.
SI1972DH-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI1972DH-T1-GE3

Part No SI1972DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 1.3A SC-70-6
Datasheet
SI1972DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.3A
Maximum Rds On at Id,Vgs 225 mOhm @ 1.3A, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 2.8nC @ 10V
Max Input Capacitance 75pF @ 15V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 106520-SI1972DH-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1972DH-T1-GE3 CAD Model

Description

The Vishay SI1972DH-T1-GE3 is a high-performance electronic component that is widely used in the electronics industry.

  • Manufacturer: Vishay
  • Supply and Demand Status: Balanced
  • Temperature Range: -55°C to 150°C
  • Case/Package: SC-70-6 (SOT-363)
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Maximum Power Dissipation: 1.25W

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0484 $62.9040
135+ $0.8602 $116.1270
210+ $0.8334 $175.0140
290+ $0.8066 $233.9140
375+ $0.7796 $292.3500
500+ $0.6990 $349.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,200 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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