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Same model may have multiple batches, images only for reference.
SI2309CDS-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI2309CDS-T1-E3

Part No SI2309CDS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 1.6A SOT23-3
Datasheet
SI2309CDS-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 4.1nC @ 4.5V
Max Input Capacitance 210pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Maximum Rds On at Id,Vgs 345 mOhm @ 1.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 141732-SI2309CDS-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI2309CDS-T1-E3 CAD Model

Description

The Vishay 141732-SI2309CDS-T1-E3 is a P-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 1.6A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 4.1nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 345 mOhm @ 1.25A, 10V
  • Package: SOT-23-3 (TO-236)
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3582 $50.1480
345+ $0.2939 $101.3955
530+ $0.2847 $150.8910
730+ $0.2755 $201.1150
940+ $0.2663 $250.3220
1,260+ $0.2388 $300.8880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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