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Same model may have multiple batches, images only for reference.
SI2311DS-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI2311DS-T1-GE3

Part No SI2311DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 3A SOT23
Datasheet
SI2311DS-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 970pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 710mW (Ta)
Maximum Rds On at Id,Vgs 45 mOhm @ 3.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095732-SI2311DS-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI2311DS-T1-GE3 CAD Model

Description

The Vishay SI2311DS-T1-GE3 is a P-channel MOSFET with a power dissipation of 710mW @ 25°C.

  • Drive Voltage: 1.8V (max Rds on) and 4.5V (min Rds on)
  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current @ 25°C: 3A
  • Maximum Gate Charge: 12nC @ 4.5V
  • Maximum Input Capacitance: 970pF @ 4V
  • Case: SOT-23-3
  • Popularity: Medium
  • Temperature Range: -55°C to 150°C (TJ)
  • Dimensions: TO-236-3, SC-59, SOT-23-3

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