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SI2328DS-T1-E3

Part No SI2328DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.15A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 5nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 730mW (Ta)
Maximum Rds On at Id,Vgs 250 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 094397-SI2328DS-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SI2328DS-T1-E3 CAD Model

Description

This MOSFET electronic component manufactured by Vishay is a widely used product for power management.

  • Polarity: N-channel
  • Maximum Power Dissipation: 730mW (Ta)
  • Case: SOT-23-3 (TO-236)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 1.15A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On @ Id, Vgs: 250 mOhm @ 1.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1617 $52.2765
95+ $1.0882 $103.3790
145+ $1.0515 $152.4675
205+ $0.9779 $200.4695
270+ $0.9412 $254.1240
335+ $0.9044 $302.9740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 73,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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