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SI2329DS-T1-GE3

Part No SI2329DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 6A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 29nC @ 4.5V
Max Input Capacitance 1485pF @ 4V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 5.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095744-SI2329DS-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2329DS-T1-GE3 CAD Model

Description

The Vishay SI2329DS-T1-GE3 is a P-channel MOSFET with a maximum power dissipation of 1.25W (Ta) and 2.5W (Tc).

  • Power Dissipation: 1.25W (Ta) and 2.5W (Tc)
  • Mounting: surface mount
  • Case/Package: SOT-23-3 (TO-236)
  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current: 6A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 800mV @ 250μA
  • Maximum Gate-Source Voltage: ±5V
  • Maximum Rds On: 30 mOhm @ 5.3A, 4.5V
  • Status: active
  • Popularity: medium
  • Supply and Demand: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4389 $50.4735
280+ $0.3602 $100.8560
430+ $0.3489 $150.0270
595+ $0.3377 $200.9315
770+ $0.3264 $251.3280
1,030+ $0.2926 $301.3780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,250 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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