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SI2333DDS-T1-GE3

Name: SI2333DDS-T1-GE3
Brand: Vishay
SKU: 512482
Availability: InStock
Rating: 4.93 (64 reviews)

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Part No	SI2333DDS-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 12V 6A SOT23
Datasheet	SI2333DDS-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	12V
Continuous Drain Current at 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Gate-Source Threshold Voltage	1V @ 250μA
Max Gate Charge	35nC @ 8V
Max Input Capacitance	1275pF @ 6V
Maximum Gate-Source Voltage	±8V
Power Dissipation (Max)	1.2W (Ta), 1.7W (Tc)
Maximum Rds On at Id,Vgs	28 mOhm @ 5A, 4.5V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	SOT-23-3 (TO-236)
Dimension	TO-236-3, SC-59, SOT-23-3
Win Source Part Number	1095746-SI2333DDS-T1-GE3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Balance
Family Name	Si2333DDS
Introduction Date	October 11, 2012
ECCN	EAR99
Halogen Free	Compliant
Estimated EOL Date	2026
Ultra Librarian 3D Model	Ultra Librarian SI2333DDS-T1-GE3 CAD Model

Alternative Products

Description

The Vishay SI2333DDS-T1-GE3 is a MOSFET discrete semiconductor product suitable for use in various electronic devices.

Supply and Demand Status: Balanced.
Operating Temperature Range: -55°C to 150°C (TJ)
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current: 6A (Tc)
Maximum Rds On @ Id,Vgs: 28 mOhm @ 5A, 4.5V
Commonly used in: Power management applications.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
335+	$0.1510	$50.5850
710+	$0.1415	$100.4650
1,100+	$0.1367	$150.3700
1,575+	$0.1272	$200.3400
2,045+	$0.1224	$250.3080
2,555+	$0.1176	$300.4680

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 57,000 pieces

MOQ: 335 pcs

Order Increment : 1 pcs

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