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SI2335DS-T1-E3

Part No SI2335DS-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 3.2A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1225pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 750mW (Ta)
Maximum Rds On at Id,Vgs 51 mOhm @ 4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 104896-SI2335DS-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2335DS-T1-E3 CAD Model

Description

The Vishay MOSFET is a high-performance component designed for use in a variety of electronic circuits.

  • Power Dissipation: 750mW (Ta)
  • Polarity: P-Channel
  • Drive Voltage: 1.8V, 4.5V
  • Mounting Technology: SMD (SMT)
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 3.2A (Ta)
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id,Vgs: 51 mOhm @ 4A, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: SOT-23-3 (TO-236)
  • Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
375+ $0.1548 $58.0500
910+ $0.1271 $115.6610
1,405+ $0.1236 $173.6580
1,945+ $0.1190 $231.4550
2,500+ $0.1155 $288.7500
3,335+ $0.1040 $346.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,390 pieces
MOQ: 375 pcs
Order Increment : 1 pcs
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