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SI2356DS-T1-GE3

Part No SI2356DS-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 4.3A SOT-23
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 370pF @ 20V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 960mW (Ta), 1.7W (Tc)
Maximum Rds On at Id,Vgs 51 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1095756-SI2356DS-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI2356DS-T1-GE3 CAD Model

Description

The SI2356DS-T1-GE3 is an N-channel MOSFET from Vishay that is designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 4.3A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On: 51 mOhm @ 3.2A, 10V
  • Package: TO-236
  • Maximum Power Dissipation: 960mW (Ta), 1.7W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: popular
  • Status: active
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
305+ $0.1666 $50.8130
735+ $0.1367 $100.4745
1,135+ $0.1324 $150.2740
1,565+ $0.1282 $200.6330
2,020+ $0.1239 $250.2780
2,705+ $0.1111 $300.5255
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,000 pieces
MOQ: 305 pcs
Order Increment : 1 pcs
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