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Same model may have multiple batches, images only for reference.
SI3424CDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3424CDV-T1-GE3

Part No SI3424CDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8A 6-TSOP
Datasheet
SI3424CDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 12.5nC @ 10V
Max Input Capacitance 405pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 3.6W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 7.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 064440-SI3424CDV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3424CDV-T1-GE3 CAD Model

Description

The Vishay SI3424CDV-T1-GE3 is a MOSFET that is widely used in various electronic devices.

  • Supply and Demand Status: Balanced
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 8A

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2257 $50.7825
540+ $0.1852 $100.0080
840+ $0.1794 $150.6960
1,155+ $0.1736 $200.5080
1,490+ $0.1678 $250.0220
1,995+ $0.1505 $300.2475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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