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Same model may have multiple batches, images only for reference.
SI3429EDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3429EDV-T1-GE3

Part No SI3429EDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CHAN 20V TSOP6S
Datasheet
SI3429EDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 118nC @ 10V
Max Input Capacitance 4085pF @ 50V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 4.2W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095823-SI3429EDV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3429EDV-T1-GE3 CAD Model

Description

This P-channel MOSFET is a high-quality electronic component that is designed to provide reliable performance and belongs to the SI3429EDV-T1-GE3 series.

  • Power Dissipation: 4.2W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Maximum Rds On @ Id,Vgs: 21 mOhm @ 4A, 10V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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