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SI3433CDV-T1-GE3 Real Image SI3433CDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI3433CDV-T1-GE3 Real Image SI3433CDV-T1-GE3 Real Image
SI3433CDV-T1-GE3 Real Image SI3433CDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3433CDV-T1-GE3

Part No SI3433CDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 6A 6TSOP
Datasheet
SI3433CDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 45nC @ 8V
Max Input Capacitance 1300pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.6W (Ta), 3.3W (Tc)
Maximum Rds On at Id,Vgs 38 mOhm @ 5.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028419-SI3433CDV-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3433CDV-T1-GE3 CAD Model

Description

The Vishay SI3433CDV-T1-GE3 is a P-channel MOSFET that has a maximum power dissipation of 1.6W (Ta) and 3.3W (Tc).

  • Drive Voltage: 1.8V and 4.5V for maximum Rds On and Min Rds On respectively
  • Category: discrete semiconductor products
  • Status: Active
  • Popularity: High
  • Supply and demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2013 $50.3250
535+ $0.1886 $100.9010
825+ $0.1822 $150.3150
1,180+ $0.1695 $200.0100
1,535+ $0.1631 $250.3585
1,915+ $0.1568 $300.2720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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